SI7460DP-T1-GE3

Description
Single N-Channel 60 V 9.6 mO 100 nC Surface Mount Power Mosfet - PowerPAK-SO-8
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (ID)
11A
Drain to Source Resistance
9.6mO
Datasheet
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  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 11A
  • Low On-Resistance: 9.6mΩ
  • Fast Switching Times: Rise Time 16ns Fall Time 16ns
  • Wide Operating Temperature Range: -55°C to 150°C

The Vishay Single N-Channel Power Mosfet is designed for high-efficiency switching applications, featuring a robust 60 V drain to source voltage and a low on-resistance of 9.6 mΩ. This surface mount device is ideal for power management in various electronic circuits, providing reliable performance with a continuous drain current of 11 A. Its compact PowerPAK-SO-8 package ensures easy integration into space-constrained designs while maintaining excellent thermal performance.

This MOSFET is commonly used in power management applications, including DC-DC converters, motor controls, and switching power supplies. With its low on-resistance and high current capability, it is ideal for energy-efficient designs. Engineers and designers in the electronics industry utilize this component for reliable performance in high-frequency circuits.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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