SQJ476EP-T1_GE3

• N-Channel Enhancement-Mode Power MOSFET
• Surface-Mount PowerPAK SO-Style package, Supplied on Tape and Reel
• Schedule B Classification 8541290080
• No voltage, current, on-Resistance or Thermal Attributes Are Recorded for This Row
• Compliance Attributes Are Incomplete and Should Be Confirmed with Vishay

The SQJ476EP-T1_GE3 is an N-channel power MOSFET from Vishay supplied in a PowerPAK SO-style surface-mount package. An enhancement-mode power MOSFET of this type is a voltage-controlled switch whose on-state loss is set by its drain-to-source on-resistance and whose switching loss is set by its gate charge, so both are evaluated together against the intended switching frequency. The catalogue record for this part carries only compliance and classification data, with no voltage, current, on-resistance or thermal attributes recorded, so no electrical ratings are asserted here. The row is flagged for catalogue attribute enrichment.

N-channel power MOSFETs in PowerPAK-class packages are used for load switching, DC-DC conversion, motor drive and battery protection, with automotive-qualified variants going into body control modules, pumps, fans and power distribution boxes. The package style exists to pull heat out through a large drain tab so that a surface-mount part can carry currents that would otherwise need a through-hole device. Buyers are automotive tier-one suppliers and industrial power-electronics OEMs. Drain-to-source voltage, continuous drain current, on-resistance and RoHS status must all be confirmed against the Vishay datasheet before design-in.