SQJB60EP-T1_GE3
- Description
- MOSFET Devices; Vishay; SQJB60EP-T1_GE3; 60 V; 30 A; 20 V; 48 W
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 30A
- Drain to Source Resistance
- 10mΩ
- Datasheet
Quantity
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- Drain to Source Voltage: 60 V
- Continuous Drain Current: 30 A
- Threshold Voltage: 2 V
- Drain to Source Resistance: 10 mΩ
- Max Power Dissipation: 48 W
- Max Operating Temperature: 175°C
The Vishay SQJB60EP-T1_GE3 is a high-performance MOSFET device designed for efficient power management in various applications. With a maximum drain to source voltage of 60 V and a continuous drain current of 30 A, this MOSFET ensures reliable operation in demanding environments. Its compact design and robust specifications make it an ideal choice for power electronics, automotive, and industrial applications.
The Vishay SQJB60EP-T1_GE3 MOSFET is commonly used in power management applications, suitable for switching and amplifying signals in electronic devices. Its key capabilities include handling a continuous drain current of 30 A and operating at a maximum voltage of 60 V, making it ideal for high-performance circuits in automotive and industrial applications. Engineers and designers frequently use it for efficient energy conversion and thermal management in power supplies and motor control systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.