SI2301CDS-T1-GE3
- Description
- Trans MOSFET P-ch 20V 3.1A 3-PIN SOT-23 T/R / MOSFET P-ch 20V 3.1A SOT23-3
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 3.1A
- Drain to Source Resistance
- 90mO
- Input Capacitance
- 405pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Continuous Drain Current: 3.1A
- Drain to Source Breakdown Voltage: 20V
- Low Drain to Source Resistance: 90mΩ
- Fast Switching Times: Rise Time 35ns and Fall Time 35ns
- Compact SOT-23 Package with 3 Pins
- RoHS Compliant and Lead Free
The Vishay Trans MOSFET P-Channel 20V 3.1A SOT-23 T/R is a high-performance MOSFET designed for efficient switching applications. With a compact SOT-23 package, this component is ideal for surface mount technology and offers reliable performance in various electronic circuits. It features a low on-resistance and fast switching times, making it suitable for power management and signal processing tasks in consumer electronics and industrial applications.
The Trans MOSFET P-ch 20V 3.1A is commonly used in low power switching applications, enabling efficient control of current in electronic circuits. It is suitable for use in battery-powered devices, motor control, and line termination. Engineers and designers in various industries such as consumer electronics and automotive utilize this component for its reliability and compact size.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.