MPN
SI9407BDY-T1-E3
Manufacturer
Description
Trans Mosfet P-ch 60V 4.7A 8-PIN SOIC N T/R / Mosfet P-ch 60V 4.7A 8-SOIC
MPN
SI9407BDY-T1-E3
Total Available Quantity
-
Main Attributes
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (ID)
3.2A
Drain to Source Resistance
120mO
Input Capacitance
600pF
Specifications
Mount
Surface Mount
Case/Package
SOIC
Number of Pins
8
Drain to Source Breakdown Voltage
60V
Power Dissipation
2.4W
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
RoHS
Compliant
Element Configuration
Single
Fall Time
30ns
Height
1.55mm
Length
5mm
Max Power Dissipation
5W
Number of Channels
1
Number of Elements
1
Radiation Hardening
No
Rds On Max
120mO
Rise Time
70ns
Schedule B
8541290080
Turn-Off Delay Time
40ns
Turn-On Delay Time
30ns
Weight
506.605978mg
Width
4mm
MPN
SI9407BDY-T1-E3
Total Available Quantity
-
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