SIR690DP-T1-GE3
- Description
- Transistor MOSFET N-CH 200V 34.4A 8-Pin PowerPAK SO T/R
- Drain to Source Resistance
- 28.5mO
- Datasheet
Quantity
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- N-Channel MOSFET Rated at 200V Drain-to-Source
- Continuous Drain Current of 34.4A
- Drain-to-Source on-Resistance of 28.5 Milliohms
- 8-Pin PowerPAK SO Surface-Mount Package
- RoHS compliant, Supplied on Tape and Reel
The SIR690DP-T1-GE3 from Vishay is an N-channel power MOSFET rated at 200V drain-to-source with a continuous drain current of 34.4A. It is supplied in an 8-pin PowerPAK SO surface-mount package and has a drain-to-source on-resistance of 28.5 milliohms. The SIR690DP-T1-GE3 is RoHS compliant and shipped on tape and reel.
200V-class N-channel MOSFETs are specified where the switching node sees high voltage swings and transients, typically in industrial and telecom power conversion rather than low-voltage point-of-load rails. The SIR690DP-T1-GE3 suits synchronous rectification, isolated DC-DC converters, motor drives, and solar or battery power stages. The PowerPAK SO package gives a low-profile surface-mount alternative to through-hole outlines, with a thermal pad that spreads heat into the board copper. Power supply and motor control engineers select this device where 28.5 milliohms of on-resistance at a 200V rating balances conduction loss against die cost.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.