SI2308BDS-T1-GE3
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- Continuous Drain Current: 1.9A
- Drain to Source Voltage: 60V
- Low Drain to Source Resistance: 156mΩ
- Compact SOT-23 Package for Surface Mount
- Fast Switching Times with Rise Time: 16ns and Fall Time: 16ns
The Vishay SI2308BDS is a high-performance N Channel MOSFET transistor designed for efficient power management in various electronic applications. With a continuous drain current of 1.9A and a drain to source voltage of 60V, this transistor ensures reliable operation in demanding environments. Its compact SOT-23 package allows for easy surface mounting, making it an ideal choice for space-constrained designs. The device operates effectively across a wide temperature range from -55°C to 150°C, ensuring versatility in diverse applications.
This N-channel MOSFET transistor is commonly used for high-efficiency switching applications and signal amplification in electronics. Its key capabilities include handling a continuous drain current of 1.9A and a breakdown voltage of 60V, making it ideal for power management and motor control circuits. Engineers and designers in the electronics industry utilize this component for its compact size and reliable performance in surface mount technology.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.