Description
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 1.6 W Avg., 28 V
Case/Package
Module
Gain
38dB
Operating Supply Voltage
28V
Datasheet
Product Image
Quantity
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  • Frequency Range: 728-960 MHz
  • Average Output Power: 1.6 W
  • Gain: 38 dB
  • Operating Supply Voltage: 28 V
  • Surface Mount Module Design
  • 24 Pins for Enhanced Connectivity

The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 728-960 MHz frequency range. With an average output power of 1.6 W and a gain of 38 dB, this amplifier ensures efficient signal amplification for various communication systems. Its compact module package and surface mount design make it suitable for space-constrained environments, while its robust specifications cater to demanding RF applications.

The Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is commonly used in wireless communication systems, offering robust amplification for signals in the 728-960 MHz range. With its high gain of 38dB and ability to operate efficiently at 28V, it is ideal for applications in mobile base stations and other RF solutions. It is utilized by telecommunications engineers and RF designers seeking reliable performance in compact, surface mount packages.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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