MPN
QSD123
Manufacturer
Description
Phototransistor IR Chip Plastic Silicon NPN Transistor 880nm 2-Pin T-1 3/4 Bulk
MPN
QSD123
Total Available Quantity
-
Specifications
Lifecycle Status
Production
Mount
Through Hole
Case/Package
Radial
Number of Pins
2
Packaging
Bulk
Collector Emitter Voltage (VCEO)
30V
Collector Emitter Breakdown Voltage
30V
Viewing Angle
24°
Orientation
Top View
Rise Time
7µs
Fall Time
7µs
Wavelength
880nm
Power Dissipation
100mW
Dark Current
100nA
Operating Supply Voltage
5V
Min Operating Temperature
-40°C
Max Operating Temperature
100°C
RoHS
Compliant
Breakdown Voltage
30V
Height
9.27mm
Lead Free
Lead Free
Lens Color
Black, Clear
Lens Style
Domed
Manufacturer Lifecycle Status
Production
Max Power Dissipation
100mW
Number of Channels
1
Number of Elements
1
Polarity
NPN
Power Consumption
100mW
Radiation Hardening
No
REACH SVHC
No
Schedule B
8541407080
Voltage Rating (DC)
30V
MPN
QSD123
Total Available Quantity
-
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