BAT54XV2T1G

• Single Silicon Schottky Rectifier diode, 1 Element
• 30 V Maximum Repetitive Reverse Voltage (VRRM); 30 V DC Reverse Voltage
• 200 mA Average Rectified / Forward current; 600 mA Peak Surge Current
• 800 mV Forward voltage; 5 Ns Reverse Recovery time; 10 pF Capacitance
• 200 mW Power dissipation; 2 uA Peak Reverse Current
• SOD-523, 1.2 Mm X 0.8 Mm X 600 um; -55 C to +125 C; Lead free, RoHS compliant, Tape and Reel

The BAT54XV2T1G is an onsemi single-element silicon Schottky rectifier diode supplied in a very small 2-pin SOD-523 package. onsemi rates it at 30 V maximum repetitive reverse voltage and 200 mA average rectified forward current, with an 800 mV forward voltage and 600 mA peak non-repetitive surge current. The BAT54XV2T1G has 10 pF capacitance, a 5 ns reverse recovery time and 2 uA peak reverse current, characteristics that reflect the low forward drop and fast switching typical of Schottky construction. The package measures 1.2 mm x 0.8 mm x 600 um, and the part is lead free, RoHS compliant, free of REACH SVHC declarations, and rated -55 C to +125 C.

Schottky Diodes are specified wherever the forward voltage drop of a standard silicon PN diode would waste too much headroom or power, and where fast recovery matters. A small-signal 30 V, 200 mA part like the BAT54XV2T1G is used for signal rectification and detection, protection and steering diodes on logic and I/O lines, small charge pumps and voltage doublers, reverse-polarity and freewheeling protection on low-current loads, and OR-ing between low-voltage supply sources. The SOD-523 footprint is chosen when board space is at a premium, such as in wearables, modules and handsets. Typical buyers are consumer, portable, IoT and general embedded electronics designers.