BCX5616QTA

Description
BCX56 Series NPN 2 W 80 V 1 A Surface Mount Power Transistor - SOT-89
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
hFE Min
100
Transition Frequency
150MHz
Max Junction Temperature (Tj)
150°C
Datasheet
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  • Surface Mount SOT-89 Package
  • NPN Polarity for Versatile Applications
  • Collector Emitter Breakdown Voltage 80V
  • Max Collector Current 1A
  • High Transition Frequency 150MHz
  • Power Dissipation Up to 1W

The Diodes Inc. BCX56 Series NPN power transistor is designed for high-efficiency applications requiring reliable performance in a compact SOT-89 package. With a maximum collector current of 1A and a collector emitter breakdown voltage of 80V, this transistor is ideal for various electronic circuits. Its high transition frequency of 150MHz ensures optimal switching performance, making it suitable for both consumer and industrial applications.

The BCX56 Series NPN 2 W 80 V 1 A Surface Mount Power Transistor is designed for use in automotive applications and general electronic circuits. It can handle a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V, making it suitable for various power management tasks. With a transition frequency of 150MHz and a power dissipation capability of up to 2W, it provides robust performance for mid-range applications in a compact SOT-89 package.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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