MMST3904-7-F
- Description
- Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
- Collector Emitter Saturation Voltage
- 300mV
- Collector Emitter Voltage (VCEO)
- 40V
- Continuous Collector Current
- 200mA
- Transition Frequency
- 300MHz
- hFE Min
- 100
- Datasheet
Quantity
21,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- NPN small-signal bipolar junction transistor (BJT)
- 40V collector-emitter voltage (VCEO), 60V VCBO
- 200mA continuous collector current
- Minimum DC current gain (hFE) of 100
- 300M Hz transition frequency
- 200mW maximum power dissipation
- 3-pin SOT-323 surface-mount package, RoHS compliant and lead free
The Diodes Inc. MMST3904-7-F is a single NPN small-signal bipolar junction transistor in a 3-pin SOT-323 surface-mount package. It offers a 40V collector-emitter voltage (VCEO), a 200mA continuous collector current and a minimum DC current gain (hFE) of 100, with a 300M Hz transition frequency. The MMST3904-7-F is RoHS compliant, lead free and supplied on tape and reel.
The MMST3904-7-F is used for general-purpose small-signal amplification and switching in consumer, computing and industrial circuits. It suits signal buffering, driver stages and logic-level switching where its high transition frequency supports higher-speed operation. It is typically specified by analog and hardware design engineers.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
21,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.