BCP5616QTA
- Description
- Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
- Collector Emitter Voltage (VCEO)
- 500mV
- Transition Frequency
- 150MHz
- Datasheet
Quantity
50,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- High Collector Emitter Breakdown Voltage: 80V
- Maximum Collector Current: 1A
- Transition Frequency: 150M Hz
- Compact SOT-223 Surface Mount Package
- RoHS Compliant
The Diodes Inc. Power Bipolar Transistor is a high-performance NPN transistor designed for efficient power management in various electronic applications. With a maximum collector current of 1A and a collector emitter breakdown voltage of 80V, this transistor is ideal for switching and amplification tasks. Housed in a compact SOT-223 package, it ensures reliable operation in space-constrained environments while maintaining excellent thermal performance with a maximum operating temperature of 150°C.
The Power Bipolar Transistor is commonly used for signal amplification and switching applications in electronic circuits. It features a collector current rating of 1A and can handle collector-emitter breakdown voltages up to 80V, making it suitable for various power management tasks. Engineers and designers in the electronics industry utilize this component for its reliable performance in surface mount configurations.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
50,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.