PDTC114EU,115

Description
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SC-70 T/R
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
50V
hFE Min
30
Max Junction Temperature (Tj)
150°C
Datasheet
Nexperia PDTC114EU,115 product image

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  • NPN Polarity for Versatile Applications
  • Max Collector Current of 100mA
  • Collector Emitter Saturation Voltage of 150mV
  • Power Dissipation Rating of 200mW
  • High Collector Base Voltage VCBO of 50V
  • Lead-Free & RoHS Compliant

The Nexperia Trans Digital BJT NPN is a reliable and efficient electronic component designed for automotive applications. With a maximum collector current of 100mA and a power dissipation of 200mW, this transistor ensures optimal performance in various circuits. Its compact 3-pin SC-70 package makes it suitable for space-constrained designs while maintaining high thermal stability with an ambient temperature range up to 150°C.

The Trans Digital BJT NPN is commonly used in automotive applications for switching and amplification tasks. With a maximum collector current of 100mA and a collector-emitter voltage rating of 50V, it is ideal for driving low to medium power loads. Engineers in automotive and industrial sectors utilize this component for its reliability and efficient thermal performance.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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