BC846B,215
- Description
- Transistor General Purpose BJT NPN 65 Volt 0.1A Automotive 3-Pin TO-236AB
- Collector Emitter Saturation Voltage
- 200mV
- Collector Emitter Voltage (VCEO)
- 65V
- hFE Min
- 110
- Max Junction Temperature (Tj)
- 150°C
- Datasheet

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- NPN Polarity for Versatile Applications
- Max Collector Current of 100mA
- Collector Emitter Saturation Voltage of 200mV
- High hFE Min of 110 for Enhanced Gain
- Power Dissipation Capability of 250mW
- Wide Ambient Temperature Range: -65°C to 150°C
The Nexperia General Purpose BJT NPN Transistor is designed for automotive applications requiring reliable performance and efficiency. With a maximum collector current of 100mA and a collector emitter voltage rating of 65V, this transistor is ideal for various electronic circuits. Its compact 3-pin TO-236AB package ensures easy integration into your designs while maintaining high thermal performance across a wide temperature range.
This transistor is commonly used in automotive and electronic applications as a switching and amplification device. It can handle up to 100mA of collector current and is suitable for high-temperature environments, making it ideal for various circuit designs. Engineers and designers in the automotive and electronics sectors frequently utilize this component for reliable performance in demanding conditions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.