BC856BLT1G

Description
ON Semi BC856BLT1G PNP Bipolar Transistor; 0.1 A; 65 V; 3-Pin SOT-23
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
65V
hFE Min
220
Transition Frequency
100MHz
Datasheet
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  • PNP Polarity for Versatile Applications
  • Collector Emitter Breakdown Voltage: 65V
  • Max Collector Current: 100mA
  • Transition Frequency: 100MHz
  • Power Dissipation: 300mW
  • Compact SOT-23 Package

The ON Semi BC856BLT1G is a versatile PNP bipolar transistor designed for a variety of electronic applications. With a maximum collector current of 100mA and a collector emitter breakdown voltage of 65V, this transistor is ideal for low-power switching and amplification tasks. Packaged in a compact 3-pin SOT-23 configuration, it ensures efficient space utilization in circuit designs while delivering reliable performance across a wide temperature range.

The ON Semi BC856BLT1G is a PNP bipolar transistor commonly used in low-power amplifier and switching applications. With a collector current of 100mA and a breakdown voltage of 65V, it's suitable for a range of electronic devices and circuit designs. Typically utilized by engineers and hobbyists in audio equipment, consumer electronics, and signal processing circuits, it offers robust performance in compact SOT-23 packaging.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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