BCP56T1G
- Description
- Transistor, Bipolar, Si, NPN, Medium Power, VCEO 80VDC, IC 1A, PD 1.5W, SOT-223, hFE 25
- Collector Emitter Saturation Voltage
- 500mV
- Collector Emitter Voltage (VCEO)
- 80V
- Transition Frequency
- 130MHz
- hFE Min
- 25
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
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- NPN medium-power bipolar junction transistor (BJT)
- 80V collector-emitter voltage (VCEO), 100V VCBO
- 1A maximum collector current
- 1.5W maximum power dissipation
- Minimum DC current gain (hFE) of 25
- 130M Hz transition frequency
- SOT-223 surface-mount package, RoHS compliant and lead free
The onsemi BCP56T1G is a single NPN medium-power bipolar junction transistor in a SOT-223 surface-mount package. It is rated for an 80V collector-emitter voltage (VCEO), a 1A maximum collector current and a 1.5W power dissipation, with a minimum DC current gain (hFE) of 25 and a 130M Hz transition frequency. The BCP56T1G is RoHS compliant, lead free and supplied on tape and reel.
The BCP56T1G is used for medium-power switching, driver stages and linear amplification in power management, motor control and industrial circuits where higher current and power handling are required. The SOT-223 package supports its 1A / 1.5W rating with good thermal performance on the board. It is typically specified by power and hardware design engineers.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.