2N7002-7-F

Description
2N7002 Series 60 V 7.5 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (ID)
115mA
Drain to Source Resistance
5O
Input Capacitance
50pF
Max Junction Temperature (Tj)
150°C
Datasheet
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  • Maximum Drain to Source Voltage: 60V
  • Continuous Drain Current: 115mA
  • Low On-Resistance: 7.5Ω
  • Fast Switching Times: Rise Time 3ns Fall Time 5.6ns
  • Compact SOT-23 Package for Space Efficiency
  • Lead-Free & RoHS Compliant

The Diodes Inc 2N7002 Series is a versatile N-Channel enhancement mode MOSFET designed for surface mount applications. With a maximum drain to source voltage of 60V and a continuous drain current of 115mA, this component is ideal for a variety of electronic circuits requiring efficient switching and amplification. Packaged in a compact SOT-23-3 case, it ensures easy integration into space-constrained designs while delivering reliable performance across a wide temperature range.

The 2N7002 series MOSFET is primarily used in low-power switching applications and signal amplification for electronic devices. With a compact SOT-23 package, it is ideal for surface-mount designs in consumer electronics, automotive, and industrial applications. Engineers and designers utilize this MOSFET to achieve efficient control of current and voltage in their circuits.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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