2N7002DW-7-F
- Description
- Diodes Inc 2N7002DW-7-F / MOSFET N-chan Dual 60V SOT363 Rohs Date Code 0810
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 115mA
- Drain to Source Resistance
- 4.4O
- Input Capacitance
- 50pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Dual N-Channel Configuration
- Maximum Drain to Source Voltage: 60V
- Continuous Drain Current: 115mA
- Low On-Resistance: 7.5Ω
- Fast Switching Times: Turn-On 7ns Turn-Off 11ns
- Compact SOT-363 Package
The Diodes Inc 2N7002DW-7-F is a versatile N-channel MOSFET designed for efficient switching applications. With a compact SOT-363 package, this dual MOSFET operates at a maximum drain to source voltage of 60V and supports continuous drain currents up to 115mA. Its low on-resistance and fast switching capabilities make it an ideal choice for various electronic circuits, ensuring reliable performance in space-constrained environments.
The Diodes Inc 2N7002DW-7-F is a dual N-channel MOSFET commonly used in various electronic circuits for switching and amplification applications. With a maximum drain-to-source voltage of 60V and continuous drain current of 115mA, it is ideal for low-power digital and analog applications. Design engineers and hobbyists often utilize this component in compact devices due to its surface-mount package and efficient performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.