DMP10H4D2S-7
- Description
- DMP10H4D2S Series 100V 270 mA P-Channel Enhancement Mode Mosfet - SOT-23-3
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 270mA
- Drain to Source Resistance
- 2.8O
- Input Capacitance
- 87pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Maximum Drain to Source Voltage: 100V
- Continuous Drain Current: 270mA
- Low On-Resistance: 4.2Ω
- Fast Switching Times: Turn-On Delay 3.3ns Turn-Off Delay 8.4ns
- Wide Operating Temperature Range: -55°C to 150°C
- Lead-Free & RoHS Compliant
The Diodes Inc DMP10H4D2S is a high-performance P-Channel enhancement mode MOSFET designed for efficient power management in various electronic applications. With a compact SOT-23-3 package, this MOSFET is ideal for surface mount technology, providing reliable performance in space-constrained designs. It features a maximum drain to source voltage of 100V and a continuous drain current of 270mA, making it suitable for a wide range of power switching applications.
The DMP10H4D2S is utilized in low voltage power management applications, serving as a switch or amplifier in electronic circuits. Its P-Channel configuration allows for efficient control in various consumer and industrial devices. Engineers and designers seeking compact, high-performance MOSFET solutions often turn to this component for applications requiring robust performance in a surface-mount package.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.