DMP10H4D2S-7
- Description
- DMP10H4D2S Series 100V 270 mA P-Channel Enhancement Mode MOSFET - SOT-23-3
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- -100V
- Continuous Drain Current (ID)
- -270mA
- Drain to Source Resistance
- 2.8Ω
- Input Capacitance
- 87pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- P-channel enhancement-mode MOSFET
- -100V drain-to-source voltage (Vdss)
- -270mA continuous drain current
- Up to 4.2 ohm on-resistance (Rds(on) max)
- 380mW power dissipation, 1V threshold
- 3-pin SOT-23 (TO-236) package, -55°C to 150°C
The Diodes Inc. DMP10H4D2S-7 is a P-channel enhancement-mode MOSFET in a 3-pin SOT-23 (TO-236) package. It is rated for -100V drain-to-source voltage and -270mA continuous drain current, with an on-resistance of up to 4.2 ohm, 380mW power dissipation, and a 1V threshold voltage.
P-channel MOSFETs like the DMP10H4D2S-7 are commonly used for high-side switching, load switching, and reverse-polarity protection. The 100V rating suits higher-voltage control and power-management circuits in industrial and computing systems. Board and power designers are the typical users.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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