DMHC3025LSD-13
- Surface Mount Design for Easy Integration
- Drain to Source Voltage: 30V
- Continuous Drain Current: 4.2A
- Low Rds On Max: 25mΩ
- Fast Switching Times with Rise Time: 4.9ns and Fall Time: 13.5ns
- Wide Operating Temperature Range: -55°C to 150°C
The Diodes Inc. Dual N/P Channel H-Bridge Power Mosfet is a versatile and efficient electronic component designed for high-performance applications. With a compact SOIC-8 package, this power mosfet is ideal for driving loads in various electronic circuits. It features a robust design that supports a wide range of operating conditions, making it suitable for both consumer and industrial applications.
The Dual N/P Channel H-Bridge Power MOSFET is commonly used in various power management applications, including motor control and switching circuits. With its low on-resistance and high current handling capabilities, it is suitable for use in compact electronic devices. Engineers and developers in robotics, automation, and power electronics frequently utilize this component for efficient power delivery and heat management.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.