BSS138DW-7-F
- Description
- Dual N-Channel 50 V 3.5 Ohm Surface Mount Enhancement MosFet - SOT-363
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 50V
- Continuous Drain Current (ID)
- 200mA
- Drain to Source Resistance
- 1.4Ω
- Input Capacitance
- 50pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Drain to Source Voltage: 50V
- Continuous Drain Current: 200mA
- Low Rds On Max: 3.5Ω
- Fast Switching Times: Turn-On and Turn-Off Delay Time 20ns
- Compact SOT-363 Package with 6 Pins
The Diodes Inc. Dual N-Channel 50 V 3.5 Ohm Surface Mount Enhancement MosFet is designed for efficient power management in compact electronic applications. This high-performance MosFet features a low on-resistance and is ideal for switching and amplification tasks in various circuits. Packaged in a space-saving SOT-363 format, it ensures reliable operation with minimal thermal resistance, making it suitable for a wide range of applications.
The Dual N-Channel MosFet is commonly used in low-power switching applications, where efficient performance in compact designs is essential. It is characterized by its low on-resistance and high breakdown voltage, making it ideal for driving loads in consumer electronics, automotive, and industrial circuits. Engineers and hobbyists frequently utilize this MosFet for its space-saving SOT-363 package and reliable operation across a wide temperature range.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.