DMN3404L-7
- Description
- N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode MOSFET - SOT-23-3
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 30V
- Continuous Drain Current (ID)
- 4.2A
- Drain to Source Resistance
- 24mO
- Input Capacitance
- 386pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Surface Mount Design for Space Efficiency
- Drain to Source Voltage: 30V
- Continuous Drain Current: 4.2A
- Low On-Resistance: 28mΩ
- Fast Switching Times with Rise and Fall Times of 6.18ns
- Wide Operating Temperature Range: -55°C to 150°C
The Diodes Inc. N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet is designed for high-efficiency switching applications. This compact SOT-23-3 package offers excellent thermal performance and reliability, making it suitable for a variety of electronic devices. With a maximum drain to source voltage of 30V and a continuous drain current of 4.2A, this Mosfet is ideal for power management solutions in consumer electronics and industrial applications.
The N-Channel 30 V 28 mOhm MOSFET is commonly used in power management and switching applications, offering efficient performance with low on-resistance and fast switching speeds. It's ideal for consumer electronics, industrial devices, and automotive systems where space-saving surface mount designs are necessary. Engineers and designers utilize this MOSFET for its robust specifications in controlling high currents while maintaining thermal stability.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.