BSS138-7-F

Description
N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
50V
Continuous Drain Current (ID)
200mA
Drain to Source Resistance
1.4O
Input Capacitance
50pF
Datasheet
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  • Surface Mount SOT-23 Package
  • Drain to Source Voltage 50V
  • Continuous Drain Current 200mA
  • Low Rds On Max 3.5Ω
  • Fast Switching Times Rise Time 10ns Fall Time 25ns
  • Wide Operating Temperature Range -55°C to 150°C

The Diodes Inc N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor is designed for high-efficiency switching applications. This compact SOT-23-3 package offers excellent thermal performance and reliability, making it suitable for a variety of electronic circuits. With a maximum drain to source voltage of 50V and a continuous drain current of 200mA, this transistor is ideal for low-power applications requiring precise control and fast switching times.

This N-Channel MOSFET is commonly used in low-voltage switching applications, offering efficient control of power in consumer electronics, automotive systems, and industrial equipment. Its small SOT-23 package makes it ideal for space-constrained designs, and it's suitable for use by engineers in circuit design and development.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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