ZXMP10A13FTA
- Description
- P-Channel 100 V 1 Ohm Surface Mount Enhancement Mode MOSFET - SOT-23
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 700mA
- Drain to Source Resistance
- 1.45O
- Input Capacitance
- 141pF
- Datasheet
Quantity
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- Surface Mount SOT-23 Package
- Drain to Source Voltage: 100V
- Continuous Drain Current: 700mA
- Low Rds On Max: 1Ω
- Fast Switching Times: Rise Time 2.1ns Fall Time 3.3ns
- Wide Operating Temperature Range: -55°C to 150°C
The Diodes Inc P-Channel 100 V 1 Ohm Surface Mount Enhancement Mode MOSFET is designed for high-efficiency switching applications. This compact SOT-23 package offers reliable performance with a maximum drain to source voltage of 100V and a continuous drain current of 700mA. With its low on-resistance and fast switching times, this MOSFET is ideal for power management and signal switching in various electronic devices.
The P-Channel MOSFET is commonly used in power management applications such as switching regulators, load switches, and reverse battery protection circuits. It offers high efficiency with low on-resistance and can handle voltage levels up to 100V, making it suitable for automotive and consumer electronics. Designers and engineers in the semiconductor industry utilize this component for its compact size and thermal performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.