DMG2305UX-7

• Single P-Channel Enhancement-Mode MOSFET
• 20 V Drain-to-Source voltage, 4.2 A Continuous Drain Current
• Maximum on-Resistance 52 M Ohm
• Threshold Voltage 900 mV for Logic-Level Gate Drive
• Switching Times: 10.8 Ns Turn-on delay, 13.7 Ns rise, 79.3 Ns Turn-Off delay, 34.7 Ns Fall
• Input Capacitance 808 pF, Power Dissipation Up to 1.4 W
• 3-Pin SOT-23 Surface-Mount package, 3.0 Mm X 1.4 mm, Tin Plated
• Operating and Junction Temperature Up to +150 C, RoHS Compliant

The Diodes Inc. DMG2305UX-7 is a single P-channel enhancement-mode MOSFET in a surface-mount SOT-23 package. It is rated for 20 V drain-to-source and 4.2 A of continuous drain current, with a maximum on-resistance of 52 m Ohm. Gate-to-source voltage is rated at 8 V and the threshold voltage is 900 mV, which allows logic-level gate drive. The device dissipates up to 1.4 W, operates from -55 C to +150 C with a 150 C maximum junction temperature, and is RoHS compliant, lead free, and supplied on tape and reel.

A logic-level P-channel MOSFET of this rating is used most often as a high-side load switch and as reverse-polarity or reverse-current protection on supply rails up to about 12 V. The 900 mV threshold lets a 1.8 V or 3.3 V GPIO drive the gate directly, and 52 m Ohm on-resistance keeps conduction loss low at multi-amp currents. Typical users include designers of battery-powered products, USB and adapter power paths, load-switching in consumer and industrial boards, and automotive accessory circuits. The SOT-23 footprint suits high-density layouts.