DMG2305UX-7
- Description
- P-Channel 20 V 52 mOhm Surface Mount Enhancement Mode MOSFET - SOT-23-3
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 4.2A
- Drain to Source Resistance
- 52mΩ
- Input Capacitance
- 808pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
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- P-Channel Enhancement-Mode MOSFET, Single Channel
- 20 V Vdss, 4.2 A Continuous Drain Current
- 52 M Ohm Maximum Rds(on) at 8 V Vgs
- 900 mV Gate Threshold Voltage for Logic-Level Drive
- 808 pF Input capacitance; 13.7 Ns rise, 34.7 Ns Fall
- 1.4 W Power dissipation, 150 C Maximum Junction temperature; SOT-23, 3 X 1.4 X 1.1 mm, Tin plating, Tape and Reel
The DMG2305UX-7 is a P-channel enhancement-mode MOSFET from Diodes Inc. in a 3-pin SOT-23 package. It carries a 20 V drain-source voltage rating, a continuous drain current of 4.2 A and a maximum on-resistance of 52 m Ohm at a gate drive of 8 V. Switching is fast, with 10.8 ns turn-on delay and 13.7 ns rise time, and the device dissipates up to 1.4 W. The DMG2305UX-7 has a 900 mV threshold voltage, making it suitable for logic-level gate drive.
A logic-level P-channel MOSFET in this rating class is used for high-side load switching, reverse-battery and reverse-polarity protection, power-rail sequencing and inrush control, and load disconnect in battery-powered products. The 900 mV threshold allows direct drive from 1.8 V and 3.3 V microcontroller I/O without a level shifter. Designers of portable electronics, USB-powered accessories, IoT modules and low-voltage distribution boards are the usual buyers. The SOT-23 footprint and 4.2 A rating suit board-level rail switching rather than main power conversion.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.