DMG2305UX-13

• Drain to Source Voltage: 20 V
• Continuous Drain Current: 4.2 A
• Low On-Resistance: 52 mΩ
• Compact SOT-23 Surface Mount Package
• Wide Operating Temperature Range: -55°C to 150°C

The Diodes Inc. P Channel Power MOSFET is a highly efficient electronic component designed for various applications requiring reliable performance and compact size. With a maximum drain to source voltage of 20 V and a continuous drain current of 4.2 A, this MOSFET is ideal for power management solutions. Packaged in a SOT-23 format, it features a low on-resistance of 52 mΩ, making it suitable for high-efficiency designs. This component operates effectively in a wide temperature range, ensuring stability and reliability in demanding environments.

The Power MOSFET, P Channel, 20 V, 4.2 A, 52 Milliohms, SOT-23, 3 Pins, Surface Mount is designed for use in various electronic applications requiring efficient power management and switching capabilities. It features a maximum drain to source voltage of 20V and a continuous drain current of 4.2A, making it suitable for enhancement mode circuits. The compact SOT-23 packaging allows for surface mounting in space-constrained designs, making it ideal for consumer electronics, power supplies, and motor controls where performance and thermal management are critical.