DMC6040SSD-13
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- Surface Mount SOIC Package
- Drain to Source Voltage: 60V
- Continuous Drain Current: 3.1A
- Low Rds On Max: 40mΩ
- Fast Switching Times with Rise Time: 6.3ns and Fall Time: 26.1ns
- Lead-Free & RoHS Compliant
The Diodes Inc. 5.1A I(D) 60V 2-Element N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET is designed for high-efficiency switching applications. This versatile component features a compact SOIC package and is ideal for surface mount technology. With a maximum operating temperature of 150°C, it ensures reliable performance in demanding environments. The dual-channel configuration allows for flexible circuit designs, making it suitable for a variety of electronic applications.
This dual MOSFET is commonly used in power management applications, including switching power supplies and motor control circuits. Its high current and voltage ratings make it suitable for a wide range of consumer and industrial electronics. Engineers and designers leverage its low on-resistance and fast switching capabilities to enhance system efficiency and performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.