DMP2035U-7
- Description
- Trans MOSFET P-ch 20V 4.9A 3-PIN SOT-23 T/R / MOSFET P-ch 20V 3.6A SOT-23
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 4.9A
- Drain to Source Resistance
- 23mO
- Input Capacitance
- 1.61nF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Surface Mount Design for Easy Integration
- Maximum Drain to Source Voltage: 20V
- Continuous Drain Current: 4.9A
- Low On-Resistance: 35mΩ
- Fast Switching Times: Rise Time 12.4ns and Fall Time 42.4ns
The Diodes Inc. Trans MOSFET P-Channel 20V 4.9A is a high-performance surface mount device designed for efficient power management in various electronic applications. This MOSFET is housed in a compact SOT-23 package, making it ideal for space-constrained designs. With a maximum drain to source voltage of 20V and a continuous drain current of 4.9A, it delivers reliable performance while ensuring low on-resistance and fast switching times. This component is perfect for use in power switching and signal amplification applications.
The Trans MOSFET P-ch 20V 4.9A 3-PIN SOT-23 T/R is commonly used in low side switching applications, enabling efficient control of power in various electronic devices. It is ideal for consumer electronics, automotive systems, and industrial controls due to its compact size and robust performance. Engineers and designers utilize this MOSFET for its high switching speed and low on-resistance, ensuring reliable operation in demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.