DMN2400UV-7
- Description
- Transistor MOSFET Array Dual N-CH 20V 1.33A 6-Pin SOT-563 T/R
- Gate to Source Voltage (Vgs)
- 12V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 1.33A
- Drain to Source Resistance
- 1.5O
- Input Capacitance
- 36pF
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Dual N-Channel MOSFET array, Two Channels in One Package
- 20V Drain-to-Source Voltage (Vdss), 1.33A Continuous Drain Current
- 480mΩ Maximum on-resistance, 900mV Threshold Voltage
- 12V Maximum Gate-to-Source voltage, 36pF Input Capacitance
- Switching: 4.06ns Turn-on delay, 7.28ns rise, 13.74ns Turn-Off delay, 10.54ns Fall
- 6-Pin SOT-563 Surface-Mount package, 1.7mm X 1.25mm X 600µm
The DMN2400UV-7 from Diodes Inc. is a dual N-channel MOSFET array in a 6-pin SOT-563 package. Each channel is rated at 20V drain-to-source with 1.33A continuous drain current and a maximum on-resistance of 480mΩ. The device has a 900mV gate threshold voltage and is rated for -55°C to 150°C operation. The DMN2400UV-7 is lead free and RoHS compliant.
Small dual N-channel MOSFETs in this class are used as low-side switches and level shifters rather than power-handling devices. Typical roles for the DMN2400UV-7 include driving LEDs, relays, small motors and buzzers from a microcontroller pin, load switching on battery-powered rails, and logic-level translation between supply domains. Two channels in a 1.7mm x 1.25mm body make it attractive where board area is scarce and a pair of switches is needed. Buyers are typically consumer, portable and IoT hardware designers and contract manufacturers building compact assemblies.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.