IRLML6401TRPBF
- Description
- Transistor: P-MOSFET; unipolar; -12V; -4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- -12V
- Continuous Drain Current (ID)
- -4.3A
- Drain to Source Resistance
- 50mΩ
- Input Capacitance
- 830pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Maximum Drain to Source Voltage: -12V
- Continuous Drain Current Rating: -4.3A
- Low On-State Resistance: 50mΩ
- Compact SOT-23 Surface Mount Package
- Power Dissipation: 1.3W
The Infineon P-Channel Power MOSFET MICRO3 is designed for high-efficiency switching applications, offering exceptional performance in a compact SOT-23 package. With a maximum drain to source voltage of -12V and a continuous drain current rating of -4.3A, this MOSFET is ideal for power management solutions in various electronic devices. Its low on-state resistance ensures minimal power loss, making it a reliable choice for demanding applications.
The Mosfet, Power; P-ch is commonly used in power management applications, including switching and amplifying electronic signals. It features a low on-state resistance, making it ideal for minimizing power loss in circuits. Engineers and designers in electronics and embedded systems utilize this component for efficient power control in various devices.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.