IRLML6402TRPBF
- High Drain to Source Voltage: 20V
- Continuous Drain Current Rating: 3.7A
- Low On-State Resistance: 65mΩ
- Fast Switching Times: Rise Time 48ns Fall Time 381ns
- Compact SOT-23 Package for Space Efficiency
The Infineon N-MOSFET transistor is a high-performance unipolar device designed for efficient switching applications. With a maximum drain to source voltage of 20V and a continuous drain current rating of 3.7A, this SMD component is ideal for various electronic circuits. Its compact SOT-23 package ensures easy integration into space-constrained designs while maintaining excellent thermal performance across a wide temperature range from -55°C to 150°C.
This MOSFET is designed for low-voltage switching applications, providing efficient performance in compact electronic circuits. It is commonly used in power management systems, amplifiers, and as a switch in various consumer electronics. Engineers and designers leverage its high current capacity and low on-resistance for improved energy efficiency in their projects.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.