IRLML6402TRPBF

• Single P-Channel MOSFET, -20V Drain-to-Source Rating
• 65 Milliohm on-Resistance
• -550 mV Gate Threshold Voltage for Logic-Level Drive
• 1.3W Maximum Power dissipation, 633 pF Input Capacitance
• 48 Ns Rise Time and 381 Ns Fall Time
• 3-Pin SOT-23 package, -55C to 150C, 150C Maximum Junction Temperature

The Infineon IRLML6402TRPBF is a single P-channel MOSFET rated -20V drain-to-source with 65 milliohm on-resistance and a -550 mV gate threshold voltage, supplied in a 3-pin SOT-23. It dissipates up to 1.3W, has 633 pF input capacitance with 48 ns rise and 381 ns fall times, and is rated from -55C to 150C with a 150C maximum junction temperature. The record gives 3.7A continuous drain current against -2.3A in the product title, a conflict that should be resolved against the manufacturer datasheet. Note the part is marked EOL in the catalog, REACH SVHC is flagged Yes, and the record carries a positive 12V gate-to-source voltage and a 'Dual Supply Voltage' field, neither of which applies to a single P-channel device.

Logic-level P-channel MOSFETs in SOT-23 are the standard high-side load switch and reverse-polarity protection element in low-voltage designs: switching a 3.3V or 5V rail to a subsystem under microcontroller control, blocking reverse current from a battery or USB input, ideal-diode ORing between two supplies, and inrush or soft-start control on a capacitive load. A P-channel device is chosen for the high side because it needs no charge pump to lift its gate above the rail, unlike an N-channel in the same position. The -550 mV threshold allows the gate to be driven directly from a 1.8V or 3.3V GPIO without a level shifter. Because this part is marked EOL, buyers should treat it as a sustaining buy against installed designs and identify a pin-compatible alternative for anything new.