BSS84,215
- Description
- Power MOSFET, P-Channel, 50 V, 130 mA, 10 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- -50V
- Continuous Drain Current (ID)
- -130mA
- Drain to Source Resistance
- 6Ω
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Drain to Source Voltage: -50 V
- Continuous Drain Current: -130 mA
- Low Drain to Source Resistance: 6 Ω
- Fast Switching Times: Turn-Off Delay Time 7 ns, Turn-On Delay Time 3 ns
- Compact SOT-23 Package with 3 Pins
- RoHS Compliant for Environmental Safety
The Nexperia P-Channel Power MOSFET is designed for efficient switching applications, offering a robust performance in a compact SOT-23 package. With a maximum drain to source voltage of -50 V and a continuous drain current of -130 mA, this MOSFET is ideal for various electronic circuits requiring reliable power management. Its low drain to source resistance of 6 Ω ensures minimal power loss, making it a perfect choice for energy-efficient designs.
The Power MOSFET, P-Channel is commonly used in power switching applications, providing efficient control of electrical power in various circuits. It is ideal for use in low-side switching configurations and is often utilized in load driver circuits, motor control, and power management systems. Engineers and developers in the electronics industry prefer this component for its reliability and performance in both commercial and consumer electronics.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.