2N7002ET1G
- Description
- 2N7002E: Small Signal MOSFET 60V 310mA 2.5 Ohm Single N-Channel SOT-23
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 260mA
- Drain to Source Resistance
- 860mO
- Input Capacitance
- 26.7pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Single N-Channel Small-Signal MOSFET
- 60 V Drain-to-Source Voltage (Vdss)
- 260 mA Continuous Drain Current
- 2.5 Ohm Maximum on-Resistance
- 3-Pin SOT-23 package, Up to 150 C
The onsemi 2N7002ET1G is a single N-channel small-signal MOSFET rated 60 V drain-to-source with a 260 mA continuous drain current. It offers a 2.5 ohm maximum on-resistance in a 3-pin SOT-23 package rated to 150 C. The 2N7002ET1G is a production, RoHS-compliant part supplied on tape and reel.
Small-signal N-channel MOSFETs like the 2N7002ET1G act as low-side switches, level shifters, and load drivers for logic-level signals. They are used in consumer, industrial, and computing boards to switch small loads and interface between voltage domains.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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