2N7002KT1G
- Description
- 2N7002KT1G N-channel MOSFET Transistor; 0.38 A; 60 V; 3-Pin SOT-23
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 320mA
- Drain to Source Resistance
- 1.19O
- Input Capacitance
- 24.5pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Maximum Drain to Source Voltage: 60 V
- Continuous Drain Current: 320 mA
- Low On-Resistance: 1.6 Ω
- Fast Switching Times: Rise Time 9 ns and Fall Time 9 ns
- Compact SOT-23 Package with 3 Pins
The onsemi 2N7002KT1G is a versatile N-channel MOSFET transistor designed for efficient switching applications. With a compact 3-pin SOT-23 package, this transistor delivers reliable performance with a maximum drain to source voltage of 60 V and a continuous drain current of 320 mA. Its low on-resistance and fast switching times make it an ideal choice for various electronic circuits, ensuring optimal power management and signal integrity.
The 2N7002KT1G N-channel MOSFET transistor is commonly used for low-power switching applications in various electronic devices. With a max drain-source voltage of 60V and a continuous drain current of 320mA, it is ideal for driving loads in consumer electronics, automotive applications, and DIY projects. Engineers and hobbyists utilize this component for its efficient performance and compact SOT-23 packaging.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.