2N7002LT1G

Description
Mosfet; N-ch; Vdss 60VDC; Rds(on) 7.5 Ohms; Id +/-115MA; SOT-23 (TO-236); Pd 225MW; -55
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (ID)
115mA
Drain to Source Resistance
7.5O
Input Capacitance
50pF
Max Junction Temperature (Tj)
150°C
Datasheet
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  • Maximum Drain to Source Voltage: 60V
  • Continuous Drain Current Rating: 115mA
  • Low On-Resistance: 7.5Ω
  • Wide Operating Temperature Range: -55°C to 150°C
  • Compact SOT-23 Package

The onsemi N-channel MOSFET is designed for efficient switching applications with a maximum drain to source voltage of 60V and a continuous drain current rating of 115mA. This compact component is housed in a SOT-23 package, making it ideal for space-constrained designs. With a low on-resistance of 7.5Ω, it ensures minimal power loss and high performance in various electronic circuits. Operating over a wide temperature range from -55°C to 150°C, this MOSFET is suitable for diverse applications requiring reliability and efficiency.

The 2N7002L is a small signal N-channel MOSFET designed for low power applications, providing a drain-to-source voltage of 60V and a continuous drain current of up to 115mA. With a maximum on-resistance of 7.5 Ohms, this MOSFET is suitable for switching and amplification in various electronic circuits, including signal processing and power management. Its compact SOT-23 package allows for efficient use in space-constrained designs, making it ideal for surface mount applications in consumer electronics and industrial equipment. The device operates across a wide temperature range from -55°C to 150°C, ensuring reliability in diverse environmental conditions.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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