2N7002
- Description
- N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 115mA
- Drain to Source Resistance
- 1.2Ω
- Input Capacitance
- 50pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Maximum Drain to Source Voltage: 60V
- Continuous Drain Current: 115mA
- Low On-Resistance: 7.5Ω
- Fast Switching Times: 15ns Rise and 15ns Fall
- Compact SOT-23 Surface Mount Package
The onsemi N-Channel MOSFET is designed for high-efficiency switching applications, featuring an enhancement mode configuration that delivers reliable performance in a compact SOT-23 package. With a maximum drain to source voltage of 60V and a continuous drain current of 115mA, this MOSFET is ideal for various electronic circuits requiring efficient power management. Its low on-resistance and fast switching times make it suitable for both consumer and industrial applications.
This N-Channel MOSFET is commonly used in switching and amplifying applications, ideal for low to medium power management circuits. With a breakdown voltage of 60V and a continuous drain current of 115mA, it is suitable for various electronic devices. Engineers and designers in the fields of consumer electronics and automotive applications often integrate this component for efficient power control.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.