BSS84
- Description
- P-Channel 50 V 10 Ohm 225 mW Surface Mount Power MOSFET - SOT-23
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 50V
- Continuous Drain Current (ID)
- 130mA
- Drain to Source Resistance
- 10Ω
- Input Capacitance
- 73pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Maximum Drain to Source Voltage: 50V
- Continuous Drain Current Rating: 130mA
- Low On-Resistance: 10Ω
- Fast Switching Times: Rise Time 6.3ns and Fall Time 6.3ns
- Compact SOT-23 Package for Surface Mount Applications
The onsemi P-Channel Power MOSFET is designed for high-efficiency switching applications, featuring a compact SOT-23 package. With a maximum drain to source voltage of 50V and a continuous drain current rating of 130mA, this MOSFET is ideal for various electronic circuits requiring reliable performance. Its low on-resistance and fast switching times make it suitable for power management and signal switching applications.
This P-Channel MOSFET is designed for applications requiring efficient power management in compact electronic devices. With a maximum voltage rating of 50V and low on-resistance, it is commonly used in switching and amplification applications within consumer electronics, automotive, and industrial systems. Engineers and circuit designers favor its surface mount package for space-constrained designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.