NVTFS5116PLTAG
- Description
- P-Channel 60 V 14 A 52 mOhm Surface Mount Power Mosfet - WDFN-8 (3.3 x 3.3)
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 6A
- Drain to Source Resistance
- 52mO
- Input Capacitance
- 1.258nF
- Datasheet
Quantity
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- Maximum Drain to Source Voltage: 60 V
- Continuous Drain Current: 6 A
- Low On-Resistance: 52 mΩ
- Wide Gate to Source Voltage: 20 V
- High Power Dissipation: 21 W
- Compact WDFN-8 Package
The onsemi P-Channel Power Mosfet is designed for high-efficiency applications requiring reliable performance in a compact form factor. With a maximum drain to source voltage of 60 V and a continuous drain current of 6 A, this surface mount device is ideal for power management solutions. Its low on-resistance of 52 mΩ ensures minimal power loss, making it suitable for various electronic applications. Packaged in a WDFN-8 configuration, this Mosfet is optimized for space-constrained designs while delivering robust thermal performance.
This P-Channel MOSFET is commonly used in applications requiring high efficiency and precision control of power, such as power management systems, converters, and motor drives. Its low on-resistance and robust current handling capability make it suitable for demanding environments in consumer electronics and automotive applications. Engineers and designers utilize this component for its reliable performance under varying temperatures and conditions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.