SI2307CDS-T1-GE3
- Description
- Power MOSFET, P-Channel, 30 V, 3.5 A, 88 MilliOhms, SOT-23 (TO-236), 3 Pins, Surface Mount
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- -30V
- Continuous Drain Current (ID)
- -2.7A
- Drain to Source Resistance
- 73mΩ
- Input Capacitance
- 340pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Maximum Drain to Source Voltage: -30 V
- Continuous Drain Current: -2.7 A
- Low On-Resistance: 88 mΩ
- Fast Switching Times: Rise Time 40 ns and Fall Time 40 ns
- Compact SOT-23 Package with 3 Pins
- Lead Free and RoHS Compliant
The Vishay Power MOSFET P-Channel is a high-performance electronic component designed for efficient power management in various applications. With a maximum drain to source voltage of -30 V and a continuous drain current of -2.7 A, this MOSFET ensures reliable operation in demanding environments. Housed in a compact SOT-23 package, it is ideal for surface mount technology, making it suitable for space-constrained designs. This component features low on-resistance and fast switching times, enhancing overall system efficiency and performance.
The Power MOSFET, P-Channel is commonly used in switching applications, power management circuits, and motor control systems. With its low on-resistance and compact SOT-23 package, it is ideal for space-constrained designs in consumer electronics and automotive applications. Engineers and designers typically use this component to enhance efficiency and reduce heat dissipation in their circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.