SQJ409EP-T1_GE3

Description
Trans MOSFET P-CH 40V 60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
40V
Continuous Drain Current (ID)
60A
Drain to Source Resistance
5.8mO
Max Junction Temperature (Tj)
175°C
Datasheet
Vishay SQJ409EP-T1_GE3 product image

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  • P-Channel MOSFET Rated 40V Vdss With 60A Continuous Drain Current
  • Low 5.8 M Ohm Drain To Source On-Resistance
  • 68W Power Dissipation And 20V Vgs Rating
  • 23ns Turn-On And 75ns Turn-Off Delay Times
  • Wide -55°C To 175°C Operating And Junction Temperature Range
  • Single-Channel PowerPAK SO Package, 1.267mm Height, Tape And Reel

The Vishay SQJ409EP-T1_GE3 is a single-channel P-channel MOSFET rated at 40 V drain-to-source with 60 A continuous drain current, supplied in a 5-pin PowerPAK SO package with tab on tape and reel. It offers 5.8 milliohm drain-to-source on-resistance, 68 W power dissipation, and a 20 V gate-to-source rating. Switching times are 23 ns turn-on delay and 75 ns turn-off delay. SQJ409EP-T1_GE3 is an automotive-grade part with a 175 C maximum junction temperature and is listed as non-RoHS compliant in the available product data.

The SQJ409EP-T1_GE3 is used in high-side switching, load switching, and reverse-battery and reverse-polarity protection circuits where a P-channel device simplifies gate drive. Its 40 V rating, 60 A current capability, and 175 C junction temperature suit 12 V automotive power distribution, body electronics, and motor drive stages, as well as rugged industrial power paths. Typical users are automotive and industrial power electronics engineers designing e-fuses, power switches, and DC power management modules.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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