S29GL512S10TFI010

Description
Parallel NOR Flash Memory, 512 Mbit Density, 100 ns Initial Access Time, TSOP-56, RoHS
Density
512Mb
Memory Size
64MB
Interface
Parallel
Access Time
15ns
Page Size
32B
Datasheet
Infineon S29GL512S10TFI010 product image

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  • High Density: 512 Mbit
  • Fast Access Time: 15 ns
  • Compact TSOP-56 Package
  • Wide Operating Temperature Range: -40°C to 85°C
  • Asynchronous Parallel Interface

The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory applications with a density of 512 Mbit and an initial access time of 15 ns. Designed for reliability and performance, this memory device is housed in a compact TSOP-56 package, making it suitable for surface mount applications. With a wide operating temperature range from -40°C to 85°C, it is ideal for various industrial and commercial uses, ensuring data integrity and fast access times.

The Parallel NOR Flash Memory is commonly used in embedded systems, consumer electronics, and automotive applications where reliable data storage is required. With a density of 512 Mbit and a fast access time of 15 ns, it enables quick data retrieval for various applications. This memory type is particularly favored by engineers and developers who need efficient, high-performance storage solutions.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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