BC856BQ-7-F

Description
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
Collector Emitter Voltage (VCEO)
65V
Datasheet
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  • Maximum Collector Current: 100mA
  • Collector Emitter Voltage: 65V
  • Surface Mount SOT-23 Package
  • High Frequency Operation: 200M Hz
  • Wide Operating Temperature Range: -65°C to 150°C

The Diodes Inc. Small Signal Bipolar Transistor is a versatile PNP transistor designed for efficient signal amplification and switching applications. With a maximum collector current of 100mA and a collector emitter voltage of 65V, this transistor is ideal for various electronic circuits. Packaged in a compact SOT-23 case, it is suitable for surface mount technology, making it a perfect choice for space-constrained designs. This transistor operates effectively across a wide temperature range, ensuring reliable performance in diverse environments.

The Small Signal Bipolar Transistor from Diodes Inc. is commonly used in low power amplification and switching applications. With a maximum collector current of 100mA and a maximum voltage rating of 65V, it is ideal for signal processing in consumer electronics and communication devices. Its surface mount SOT-23 package allows for efficient integration into compact circuit designs.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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