BSS138W-7-F

Description
Transistor: N-MOSFET, unipolar, 50V, 0.2A, 3.5ohm, 0.2W, -55+150 deg.C, SMD, SOT323(SC70)
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
50V
Continuous Drain Current (ID)
200mA
Drain to Source Resistance
1.4O
Input Capacitance
50pF
Datasheet
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  • Maximum Drain to Source Voltage: 50V
  • Continuous Drain Current: 200mA
  • Low On-Resistance: 3.5Ω
  • Wide Operating Temperature Range: -55°C to 150°C
  • Compact SOT-323 Package
  • Fast Switching Times: 20ns Turn-On and Turn-Off Delay

The Diodes Inc N-MOSFET transistor is a high-performance unipolar device designed for efficient switching applications. With a maximum drain to source voltage of 50V and a continuous drain current of 200mA, this SMD component is ideal for compact electronic designs. Its robust construction allows for operation in extreme temperatures ranging from -55°C to 150°C, making it suitable for a variety of environments. Packaged in a space-saving SOT-323 format, this transistor ensures reliable performance in modern electronic circuits.

This N-MOSFET is commonly used in electronic circuits for switching and amplification purposes, facilitating efficient control of power in devices. It is suitable for compact designs due to its surface mount configuration and is utilized in consumer electronics, automotive, and industrial applications where reliability and performance are key. Engineers and designers opt for this component to enhance energy efficiency while managing gate voltage effectively.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
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