MPN
RN1408(TE85L,F)
Total Available Quantity
-
Main Attributes
Collector Emitter Voltage (VCEO)
300mV
Transition Frequency
250MHz
Specifications
Mount
Surface Mount
Case/Package
TO-236
Number of Pins
3
Packaging
Tape & Reel
Max Collector Current
100mA
Collector Emitter Breakdown Voltage
50V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
RoHS
Compliant
Element Configuration
Single
Max Breakdown Voltage
50V
Max Power Dissipation
200mW
Radiation Hardening
No
About This Product
The Toshiba Tran NPN S-mini 50V 100A is a high-performance bipolar junction transistor (BJT) designed for a variety of electronic applications requiring efficient switching and amplification. With a compact TO-236 surface mount package, this transistor is optimized for space-constrained environments while delivering robust performance. It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, making it suitable for both low-power and high-frequency applications. Its impressive transition frequency of 250MHz ensures reliable operation in demanding conditions, with a wide operating temperature range from -55°C to 150°C.
MPN
RN1408(TE85L,F)
Total Available Quantity
-
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