TPN2R703NL,L1Q

Description
Trans MOSFET N-CH 30V 90A 8-Pin TSON
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
30V
Continuous Drain Current (ID)
45A
Drain to Source Resistance
3.3mO
Input Capacitance
2.1nF
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  • High Drain to Source Voltage (30V)
  • Continuous Drain Current of 45A
  • Low On-Resistance (Rds On Max: 2.7mO)
  • Fast Switching Times (Rise Time: 4.4ns, Fall Time: 5.7ns)
  • Wide Operating Temperature Range (-55°C to 150°C)
  • Max Power Dissipation of 42W
  • RoHS Compliant for Environmental Safety
  • Convenient Tape & Reel Packaging

The Toshiba Trans MOSFET N-CH 30V 90A is a high-performance surface mount MOSFET designed for demanding applications requiring efficient power management and high reliability. With a maximum drain-to-source voltage of 30V and a continuous drain current of 45A, this component is ideal for a variety of power switching applications. Packaged in an 8-pin TSON configuration, it ensures optimal thermal performance and space efficiency, making it suitable for modern electronic designs.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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