Description
Sensor; Phototransistor; Reflective; 3V Emitter; 30V Detector; 100 mW; 50 mA
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
50mA
Peak Wavelength
850nm
Datasheet
Product Image
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  • High Sensitivity with Peak Wavelength of 850nm
  • Output Voltage of 30V for Enhanced Performance
  • Wide Sensing Distance up to 76.2mm
  • Robust Power Dissipation of 100mW
  • Operating Temperature Range: -40°C to 85°C

The TT Electronics Reflective Phototransistor Sensor is designed for precise detection in various applications requiring reliable performance. With a forward voltage of 1.8V and a maximum collector current of 50mA, this sensor operates efficiently within a wide range of conditions. Its compact design allows for easy integration into chassis and panel mounts, making it suitable for diverse setups. The sensor features a peak wavelength of 850nm, ensuring optimal sensitivity for reflective sensing tasks.

This phototransistor is commonly used in reflective sensing applications, where it detects the presence of objects within a specified distance. It is suitable for use in automation, consumer electronics, and industrial equipment, providing reliable output for systems requiring light detection. Engineers and developers leverage its capabilities to create devices that respond to light signals, enhancing functionality in various applications.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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