2SAR542PFRAT100

Description
Bipolar Transistors - BJT PNP SOT-89 -5A 200 to 500hFE -30V
Transition Frequency
240MHz
Datasheet
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  • Surface Mount Design for Easy Integration
  • PNP Polarity for Versatile Applications
  • Collector Emitter Breakdown Voltage: -30V
  • High Transition Frequency: 240MHz
  • Max Operating Temperature: 150°C
  • Max Power Dissipation: 500mW

The ROHM Bipolar Transistor BJT PNP SOT-89 is designed for high-performance applications requiring efficient switching and amplification. With a compact SOT-89 package, this transistor is ideal for surface mount technology, making it suitable for various electronic devices. It operates effectively with a collector emitter breakdown voltage of -30V and a transition frequency of 240MHz, ensuring reliable performance in demanding environments.

This PNP bipolar transistor is commonly used in various switching and amplification applications, featuring a compact SOT-89 package for surface mount designs. It supports high-frequency operation with a transition frequency of 240MHz and can handle collector-emitter breakdown voltages up to -30V. Engineers and designers often utilize this component in consumer electronics, communications equipment, and power management systems.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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