EMD9T2R

Description
Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin EMT T/R
Collector Emitter Voltage (VCEO)
300mV
hFE Min
68
Transition Frequency
250MHz
Datasheet
Product Image
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  • Surface Mount Design for Easy Integration
  • Dual Element Configuration for Versatile Applications
  • Max Collector Current: 100mA
  • Transition Frequency: 250MHz
  • Power Dissipation: 150mW
  • Wide Operating Temperature Range: -55°C to 150°C

The ROHM Trans Digital BJT NPN/PNP is a versatile electronic component designed for high-performance applications requiring reliable switching and amplification. With a dual element configuration, this surface mount transistor operates efficiently at a maximum collector current of 100mA and a collector emitter breakdown voltage of 50V. Its compact 6-pin design ensures easy integration into various electronic circuits, making it an ideal choice for both consumer and industrial applications.

The Trans Digital BJT NPN/PNP is commonly used in signal amplification and switching applications within electronic circuits. With capabilities of handling a collector current of up to 100mA and a breakdown voltage of 50V, it is suitable for various consumer and industrial electronics. Engineers and designers in fields such as telecommunications and automation often utilize this component for its compact size and reliable performance.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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