DTC114EKAT146
The Pre-Biased Bipolar Transistor (BJT) NPN is a small signal transistor with a collector emitter breakdown voltage of 50V and a max collector current of 50mA. This surface mount transistor, part of the DTC114EKA Series by ROHM, is suitable for various electronic applications where amplification or switching of electrical signals is required. With a transition frequency of 250MHz and a power dissipation of 200mW, this transistor is ideal for use in high-frequency circuits and low-power applications. Its compact size and lead-free design make it a versatile component for integration into electronic devices.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.